The photoluminescence of silicon-hydrogen films grown in HF-NaNO2 solu
tions in static and dynamic regimes has been studied. Two types of pho
toluminescence spectra are observed. The spectra of the first type hav
e symmetric bands, like the spectra of porous silicon. The lineshape,
the positions of the peaks, and their half-widths depend only weakly o
n the temperature. The emission spectra of the second type are observe
d in certain samples during excitation of the photoluminescence of fil
ms formed on the lower (''nonworking'') side of the silicon plates. Th
ese spectra consist of two photoluminescence bands. The shorter-wave b
and has a stronger temperature dependence than the long-wave band. As
the temperature is lowered, the shorter-wave band moves toward higher
photon energies.