ROLE OF FIELD EFFECTS IN A DETERMINATION OF THE CONCENTRATION OF THERMAL DONORS IN SILICON BY DLTS METHOD

Doubly charged thermal donors in silicon are used as an example for st udying the effect of a nonexponential nature of capacitance relaxation processes on the accuracy with which the concentration of centers in an attractive Coulomb potential is determined by the DLTS method. A fi eld dependence of the rate of thermal emission of carriers from the le vels of such centers (the Poole-Frenkel' effect) can lower the amplitu de of the DLTS signal substantially, by a factor of 2 to 4.