PHOTOELECTROCHEMICAL BEHAVIOR OF THE GAAS ALXGA1-XAS SUPERLATTICE ELECTRODE/ELECTROLYTE INTERFACE/

Authors
LIU Y XIAO XR LI XP REN XM ZHENG HQ ZENG YP YAN CH SUN DZ
Citation
Y. Liu et al., PHOTOELECTROCHEMICAL BEHAVIOR OF THE GAAS ALXGA1-XAS SUPERLATTICE ELECTRODE/ELECTROLYTE INTERFACE/, Chinese Physics Letters, 11(4), 1994, pp. 239-241
Citations number
2
Categorie Soggetti
Physics
Journal title
Chinese Physics Letters → ACNP
ISSN journal
0256307X
Volume
11
Issue
4
Year of publication
1994
Pages
239 - 241
Database
ISI
SICI code
0256-307X(1994)11:4<239:PBOTGA>2.0.ZU;2-E
Abstract
Single and multiple quantum wells of lattice-matched superlattices mat erial GaAs/AlxGa1-xAs have been studied as photoelectrodes in photoele ctrochemical cells containing nonaqueous electrolyte. Structural photo current spectra in the potential range of -1.8 to 1.0 V (vs standard c alomel electrode) were obtained. The quantum yields for both superlatt ice electrodes were estimated and compared.