MICROSTRUCTURAL CHARACTERIZATION FOR GE CLUSTERS EMBEDDED IN A-SIN(Y)MATRIX PREPARED BY PECVD METHOD

Authors
QU XX CHEN KJ WANG MX LI ZF XIA H FENG D
Citation
Xx. Qu et al., MICROSTRUCTURAL CHARACTERIZATION FOR GE CLUSTERS EMBEDDED IN A-SIN(Y)MATRIX PREPARED BY PECVD METHOD, Chinese Physics Letters, 11(4), 1994, pp. 253-256
Citations number
18
Categorie Soggetti
Physics
Journal title
Chinese Physics Letters → ACNP
ISSN journal
0256307X
Volume
11
Issue
4
Year of publication
1994
Pages
253 - 256
Database
ISI
SICI code
0256-307X(1994)11:4<253:MCFGCE>2.0.ZU;2-H
Abstract
We report the successful synthesis of Ge clusters embedded in a-SiN(y) :H matrix prepared by the plasma enhanced chemical vapor deposition (P ECVD) method. Chemical microstructural characteristics of this granula r thin film were analysed using the infrared absorption, x-ray diffrac tion, Raman scattering, and transmission electron microscopy. Finally we discuss briefly the synthesis mechanism of this new material.