NEUTRON TRANSMUTATION DOPING OF LIQUID-PHASE EPITAXIAL GALLIUM-ARSENIDE

Authors
ALEXIEV D BUTCHER KSA EDMONDSON M TANSLEY TL
Citation
D. Alexiev et al., NEUTRON TRANSMUTATION DOPING OF LIQUID-PHASE EPITAXIAL GALLIUM-ARSENIDE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 86(3-4), 1994, pp. 288-292
Citations number
22
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
86
Issue
3-4
Year of publication
1994
Pages
288 - 292
Database
ISI
SICI code
0168-583X(1994)86:3-4<288:NTDOLE>2.0.ZU;2-#
Abstract
Neutron transmutation doping (NTD) was studied as a means of compensat ing p-type liquid phase epitaxial (LPE) gallium arsenide. It is shown that such epitaxial layers can be transmuted into approximately 3 X 10 (13) cm-3 n-type material, defect free after appropriate thermal annea ling.