HYDROGEN EFFECTS ON THE ELECTRICAL-PROPERTIES OF ELECTRON-IRRADIATED N-TYPE SI EPILAYERS

Authors
SHLOPAK NV ULYASHIN AG BUMAI YA
Citation
Nv. Shlopak et al., HYDROGEN EFFECTS ON THE ELECTRICAL-PROPERTIES OF ELECTRON-IRRADIATED N-TYPE SI EPILAYERS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 86(3-4), 1994, pp. 298-302
Citations number
17
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
86
Issue
3-4
Year of publication
1994
Pages
298 - 302
Database
ISI
SICI code
0168-583X(1994)86:3-4<298:HEOTEO>2.0.ZU;2-Z
Abstract
The influence of hydrogen plasma treatment on the free electron concen tration and mobility in electron-irradiated n-type Si epilayers has be en investigated by C-V, Hall effect and conductivity measurements. It is shown that hydrogen incorporated from a plasma into n-Si prior to e lectron irradiation leads to an increase of its radiation hardening an d significantly affects the isochronal annealing behaviour. It is foun d that hydrogenation of electron-irradiated n-Si results in recovery o f the electrical properties due to hydrogen passivation of radiation d efects. The properties of electron irradiated vs gamma-irradiated hydr ogenated silicon are discussed.