ANISOTROPIC ETCHING OF SILICON IN HYDRAZINE

Authors
GAJDA MA AHMED H SHAW JEA PUTNIS A
Citation
Ma. Gajda et al., ANISOTROPIC ETCHING OF SILICON IN HYDRAZINE, Sensors and actuators. A, Physical, 40(3), 1994, pp. 227-236
Citations number
12
Categorie Soggetti
Engineering, Eletrical & Electronic","Instument & Instrumentation
Journal title
Sensors and actuators. A, Physical → ACNP
ISSN journal
09244247
Volume
40
Issue
3
Year of publication
1994
Pages
227 - 236
Database
ISI
SICI code
0924-4247(1994)40:3<227:AEOSIH>2.0.ZU;2-G
Abstract
A series of experiments has been carried out to study the etching prop erties of silicon in hydrazine, with particular emphasis on the applic ability of the etchant in micromachining of microsensors. A new method of suppressing the etching of aluminium in hydrazine is presented 'an d a simple theory to account for the observed effects is proposed. Pra ctical aspects involved in the setting up of hydrazine etching equipme nt are also discussed.