CYCLOTRON-RESONANCE OF CHARGE-CARRIERS IN STRAINED GE GE1-XSIX HETEROSTRUCTURES/

Authors
GAVRILENKO VI KOZLOV IN KUZNETSOV OA MOLDAVSKAYA MD NIKONOROV VV ORLOV LK CHERNOV AL
Citation
Vi. Gavrilenko et al., CYCLOTRON-RESONANCE OF CHARGE-CARRIERS IN STRAINED GE GE1-XSIX HETEROSTRUCTURES/, JETP letters, 59(5), 1994, pp. 348-352
Citations number
4
Categorie Soggetti
Physics
Journal title
JETP letters → ACNP
ISSN journal
00213640
Volume
59
Issue
5
Year of publication
1994
Pages
348 - 352
Database
ISI
SICI code
0021-3640(1994)59:5<348:COCISG>2.0.ZU;2-2
Abstract
The cyclotron resonance of photogenerated carriers in a strained, mult ilayer, undoped Ge/Ge1-xSix heterostructure has been studied for the f irst time. The spectra of the absorption and the millimeter-range phot oconductivity spectra have a line corresponding to a cyclotron resonan ce of carriers with an effective mass m(c) congruent-to 0.07 m0. This value corresponds to the transverse mass of holes at the bottom of the deformed quantum wells in the Ge layers. A residual photoconductivity is observed. It results from holes which remain in Ge layers after th e interband illumination is turned off.