EPITAXIAL-GROWTH OF BI2SR2CU1-XTIXOY THIN-FILMS ON SRTIO3 (100) AND BI2SR2CACU2O8 SINGLE-CRYSTALS FOR CONSTRUCTION OF TUNNELING BARRIER

The growth of high-resistivity Bi2Sr2Cu1-xTiOy(x = 0, 0.1, 0.2, 0.3) t hin films on SrTiO3 (100) substrates has been performed using the lase r molecular beam epitaxy method. The aim is to obtain a tunneling barr ier with a barrier higher than that of Bi2Sr2CuO6 (2201) film. The gro wth process has been observed in situ by reflection high-energy electr on diffraction, and the films are characterized by the X-ray diffracti on method. The growth of Bi2Sr2Cu0.8Ti0.2Oy film On the superconductin g Bi2Sr2CaCu2O8 single crystal has also been examined for the tunnelin g barrier. This has a higher barrier than the titanium-free 2201 film in the Au/barrier/Bi2Sr2CaCu2O8 tunneling junctions.