H. Abuhassan et al., PHOTOLUMINESCENCE AND RAMAN STUDIES OF ZN0.7CD0.3SE ZNSE SHORT-PERIODSTRAINED-LAYER SUPERLATTICES GROWN BY HOT-WALL EPITAXY/, JPN J A P 2, 33(4B), 1994, pp. 120000604-120000606
Optical and structural studies on short period Zn0.7Cd0.3Se/ZnSe strai
ned-layer superlattices (SLS) grown by hot wall epitaxy have been perf
ormed experimentally using photoluminescence and Raman scattering. We
have found an additional luminescence peak (in our shorter period SLS)
at higher energy than the dominant exciton transition peak. From our
Raman scattering measurements and a Kromg-Penney model for calculating
excitonic transitions in quantum wells, this phenomenon can be interp
reted in terms of monolayer-type interface fluctuation.