PHOTOLUMINESCENCE AND RAMAN STUDIES OF ZN0.7CD0.3SE ZNSE SHORT-PERIODSTRAINED-LAYER SUPERLATTICES GROWN BY HOT-WALL EPITAXY/

Authors
ABUHASSAN H JEN JY OKA Y
Citation
H. Abuhassan et al., PHOTOLUMINESCENCE AND RAMAN STUDIES OF ZN0.7CD0.3SE ZNSE SHORT-PERIODSTRAINED-LAYER SUPERLATTICES GROWN BY HOT-WALL EPITAXY/, JPN J A P 2, 33(4B), 1994, pp. 120000604-120000606
Citations number
12
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS → ACNP
Volume
33
Issue
4B
Year of publication
1994
Pages
120000604 - 120000606
Database
ISI
SICI code
Abstract
Optical and structural studies on short period Zn0.7Cd0.3Se/ZnSe strai ned-layer superlattices (SLS) grown by hot wall epitaxy have been perf ormed experimentally using photoluminescence and Raman scattering. We have found an additional luminescence peak (in our shorter period SLS) at higher energy than the dominant exciton transition peak. From our Raman scattering measurements and a Kromg-Penney model for calculating excitonic transitions in quantum wells, this phenomenon can be interp reted in terms of monolayer-type interface fluctuation.