HOMOLEPTIC TIN AND SILICON AMIDO COMPOUNDS AS PRECURSORS FOR LOW-TEMPERATURE ATMOSPHERIC-PRESSURE CHEMICAL-VAPOR-DEPOSITION OF TIN AND SILICON-OXIDE THIN-FILMS

Authors
ATAGI LM HOFFMAN DM LIU JR ZHENG ZS CHU WK RUBIANO RR SPRINGER RW SMITH DC
Citation
Lm. Atagi et al., HOMOLEPTIC TIN AND SILICON AMIDO COMPOUNDS AS PRECURSORS FOR LOW-TEMPERATURE ATMOSPHERIC-PRESSURE CHEMICAL-VAPOR-DEPOSITION OF TIN AND SILICON-OXIDE THIN-FILMS, Chemistry of materials, 6(4), 1994, pp. 360-361
Citations number
24
Categorie Soggetti
Chemistry Physical","Material Science
Journal title
Chemistry of materials → ACNP
ISSN journal
08974756
Volume
6
Issue
4
Year of publication
1994
Pages
360 - 361
Database
ISI
SICI code
0897-4756(1994)6:4<360:HTASAC>2.0.ZU;2-T
Abstract
Main-group amido complexes are reactive sources of the main-group elem ents in CVD processes. This is illustrated by reacting Sn(NMe2)4 and S i(NMe2)4 with oxygen in an atmospheric pressure chemical vapor deposit ion reactor to give nearly stoichiometric tin and silicon oxide films at low substrate temperatures.