Sv. Didziulis et al., PHOTOELECTRON SPECTROSCOPIC STUDIES OF THE ELECTRONIC-STRUCTURE AND BONDING IN TIC AND TIN, Inorganic chemistry, 33(9), 1994, pp. 1979-1991
Titanium carbide (TiC) and titanium nitride (TiN) possess remarkable p
hysical properties, such as extremely high hardness and melting point,
that promote their use as antiwear materials under harsh tribological
conditions. These physical properties must arise from chemical bondin
g phenomena that result from the inclusion of the non-metal atom withi
n the metallic matrix, and these bonding phenomena should be apparent
in measurements of the valence-band electronic structures of TiC and T
iN. This paper explores the surface electronic structure and bonding i
n TiC(100) and TiN(110) with core and valence level photoelectron spec
troscopies (PES's) using X-rays (1486.6 eV) and synchrotron radiation
in tbe range 28-180 eV. Intensity changes in the valence-band features
are followed as a function of incident photon energy; these changes a
re then compared to theoretical atomic photoionization cross sections
to determine the atomic origins of these features. Resonant PES at the
Ti 3p absorption edge is used to determine titanium 3d contributions
to the valence band and to show differences in the electronic structur
es in TiC and TiN. A new resonance phenomenon near the Ti 3s edge in T
iC was observed, and its possible assignment is discussed. The electro
nic structure and bonding in these materials is well described by mole
cular orbital theory, where the Ti and non-metal ions in their formal
oxidation states (e.g., Ti4+ and C4- in TiC) undergo covalent bonding
interactions. Overall, the PES results indicate greater covalent mixin
g for TiC as compared to TiN, consistent with the differences in the e
lectronegativities of the atoms. Specifically, stronger covalent inter
actions between the C 2s, 2p and the Ti 3d, 4s, 4p levels must occur t
o explain tbe spectroscopic differences between TiC and TiN. In additi
on, there is no evidence for an occupied TiC valence level having pred
ominantly Ti character (unlike TiN), precluding the existence of direc
t Ti-Ti bonding in TiC. Any such orbital overlap is significantly affe
cted by the carbon atoms in the lattice.