STOCHASTIC DYNAMICS OF DIFFUSIVE DEPOSITION-EVAPORATION PROCESSES IN THE PRESENCE OF DEFECTS

Authors
CHEN NN STINCHCOMBE RB
Citation
Nn. Chen et Rb. Stinchcombe, STOCHASTIC DYNAMICS OF DIFFUSIVE DEPOSITION-EVAPORATION PROCESSES IN THE PRESENCE OF DEFECTS, Physical review. E, Statistical physics, plasmas, fluids, and related interdisciplinary topics, 49(4), 1994, pp. 2784-2789
Citations number
13
Categorie Soggetti
Physycs, Mathematical","Phsycs, Fluid & Plasmas
Journal title
Physical review. E, Statistical physics, plasmas, fluids, and related interdisciplinary topics → ACNP
ISSN journal
1063651X
Volume
49
Issue
4
Year of publication
1994
Part
A
Pages
2784 - 2789
Database
ISI
SICI code
1063-651X(1994)49:4<2784:SDODDP>2.0.ZU;2-H
Abstract
An exact calculation of the autocorrelation function is presented for the dimer deposition-evaporation model with single particle diffusion in the presence of a bond defect. Different time regimes are separated by crossover times, which are determined by the interplay between the spatial and temporal characteristics of the autocorrelation function. For certain choices of the stochastic rates, localized defect modes c an alter the ultimate long-time exponential decay rate of the entire s ystem.