A TRANSIENT METHOD OF THERMAL CHARACTERIZATION OF DOUBLE-HETEROSTRUCTURE LASER-DIODES

This paper presents a method to measure simultaneously the thermophysi cal properties of laser diodes and of their adhesive bonds under opera ting conditions. With this aim in view, temporal profiles of junction temperature are analyzed, during cooling down, from 10(-6) to 10(-3) s ec. Temperature measurement is based on the thermodependence of the te rminal voltage across the laser diodes and takes into account thermoel ectric effects. A multi-dimensional heat diffusion model allows the id entification of the substrate thermal diffusivity and the thermal resi stance of the adhesive bond. Moreover, the junction temperature and th e heat generation rate in steady state are determined as a function of input power. Experimental results concern a GaAlAs/GaAs double hetero structure laser. (C) 1997 Elsevier Science Ltd.