ELECTRON-STIMULATED NITRIDATION OF SI(100) IN PURE AMMONIA

We present the results of an AES study of the Si(100) electron-stimula ted nitridation at RT by ammonia gas. The influence of the gas pressur e and electron beam density on the nitridation rate have been determin ed within the ranges 10(-6)-10(-9) Torr and 5 X 10(-3)-5 x 10(-2) A/cm 2, respectively. The silicon nitride growth rate has been found to be proportional to the electron flux and is enhanced with increased ammon ia pressure in the range 10(-9)-10(-7) Torr. Beyond 10(-7) Torr the Si nitride growth rate is constant and independent of ammonia pressure. A phenomenological model of electron-stimulated nitridation process is suggested, which is in good agreement with the experimental data. The rate of electron-stimulated nitridation has been deduced.