Jlf. Goldstein et Jw. Morris, MICROSTRUCTURAL DEVELOPMENT OF EUTECTIC BI-SN AND EUTECTIC IN-SN DURING HIGH-TEMPERATURE DEFORMATION, Journal of electronic materials, 23(5), 1994, pp. 477-486
Eutectic Bi-Sn and In-Sn solder joints were subjected to high temperat
ure deformation in shear in order to determine whether microstructural
instabilities are generated during testing. Dynamic recrystallization
had previously been observed in Sn-Pb solder joints during creep and
fatigue in shear. The current study shows that Bi-Sn can recrystallize
during deformation in creep or at constant strain rate, whereas no mi
crostructural changes are observed in In-Sn. Recrystallization of Bi-S
n is concentrated in a narrow band along the length of the sample, par
allel to the direction of shear strain, similar to behavior in Sn-Pb.
The recrystallization appears to proceed by migration of interphase bo
undaries rather than by a nucleation and growth mechanism. A minimum t
otal strain is required to induce obvious recrystallization in Bi-Sn,
independent of applied stress or strain rate. This value of strain is
much higher than the strain at initiation of tertiary creep or at the
maximum shear stress. Onset of tertiary creep and strain softening occ
ur as a result of nonuniform deformation in the samples that is indepe
ndent of the microstructural instabilities. The creep behavior of In-S
n is relatively straightforward, with a single creep mechanism operati
ng at all temperatures tested. The creep behavior of Bi-Sn is temperat
ure-dependent. Two mechanisms operate at lower temperatures, but there
is still some question as to whether one or both of these, or a third
mechanism, operates at higher temperatures.