P. Hesto et al., FIELD-EFFECT INDUCED MODULATION OF CONDUCTION IN LANGMUIR-BLODGETT-FILMS OF ETHYLENEDITHIOTETRATHIOFULVALENE DERIVATIVES, Thin solid films, 242(1-2), 1994, pp. 7-10
Field effect transistors have been made, the channels of which consist
of conducting, iodine-doped Langmuir-Blodgett (LB) films. In the chos
en configuration. the modulation effect is shown to arise-mostly from
the source channel contact, which behaves as a reverse-biased Schottky
diode. The gate voltage modulates the height of the diode barrier by
controlling the surface charge density of the oxide LB film interface
states. This model explains qualitatively and quantitatively the behav
iour of the transistor and gives rise to remarkably good fits with the
experimental transistor characteristics. The model is also supported
by a counterexperiment in which the source and drain contacts are ohmi
c, as expected this leads to almost no drain current modulation.