ELECTROLUMINESCENCE FROM POROUS SILICON WITH CONDUCTING POLYMER FILM CONTACTS

Authors
LI KH DIAZ DC HE YS CAMPBELL JC TSAI CC
Citation
Kh. Li et al., ELECTROLUMINESCENCE FROM POROUS SILICON WITH CONDUCTING POLYMER FILM CONTACTS, Applied physics letters, 64(18), 1994, pp. 2394-2396
Citations number
17
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
64
Issue
18
Year of publication
1994
Pages
2394 - 2396
Database
ISI
SICI code
0003-6951(1994)64:18<2394:EFPSWC>2.0.ZU;2-9
Abstract
Visible electroluminescence with a peak wavelength of 6300 angstrom is observed from forward-biased porous Si p-n diodes with conducting pol ymer contacts. These devices have brighter electroluminescence than si milar devices with thin, gold-film contacts. Electroluminescence is al so observed from conducting polymer/n-porous Si diodes.