Jc. Roberts et al., LOW-TEMPERATURE GROWTH OF HIGH-RESISTIVITY GAAS BY PHOTOASSISTED METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 64(18), 1994, pp. 2397-2399
We report the photoassisted low-temperature (LT) metalorganic chemical
vapor deposition (MOCVD) of high resistivity GaAs. The undoped as-gro
wn GaAs exhibits a resistivity of approximately 10(6) OMEGA cm, which
is the highest reported for undoped material grown in the MOCVD enviro
nment. Photoassisted growth of doped and undoped device quality GaAs h
as been achieved at a substrate temperature of 400-degrees-C in a modi
fied atmospheric pressure MOCVD reactor. By using silane as a dopant g
as, the LT photoassisted doped films have high levels of doping and el
ectron mobilities comparable to those achieved by MOCVD for growth tem
peratures, T(g)>600-degrees-C.