LOW-TEMPERATURE GROWTH OF HIGH-RESISTIVITY GAAS BY PHOTOASSISTED METALORGANIC CHEMICAL-VAPOR-DEPOSITION

We report the photoassisted low-temperature (LT) metalorganic chemical vapor deposition (MOCVD) of high resistivity GaAs. The undoped as-gro wn GaAs exhibits a resistivity of approximately 10(6) OMEGA cm, which is the highest reported for undoped material grown in the MOCVD enviro nment. Photoassisted growth of doped and undoped device quality GaAs h as been achieved at a substrate temperature of 400-degrees-C in a modi fied atmospheric pressure MOCVD reactor. By using silane as a dopant g as, the LT photoassisted doped films have high levels of doping and el ectron mobilities comparable to those achieved by MOCVD for growth tem peratures, T(g)>600-degrees-C.