BACK SIDE RAMAN MEASUREMENTS ON GE PD/N-GAAS OHMIC CONTACT STRUCTURES/

Authors
WUYTS K WATTE J SILVERANS RE VANHOVE M BORGHS G PALMSTROM CJ FLOREZ LT MUNDER H
Citation
K. Wuyts et al., BACK SIDE RAMAN MEASUREMENTS ON GE PD/N-GAAS OHMIC CONTACT STRUCTURES/, Applied physics letters, 64(18), 1994, pp. 2406-2408
Citations number
22
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
64
Issue
18
Year of publication
1994
Pages
2406 - 2408
Database
ISI
SICI code
0003-6951(1994)64:18<2406:BSRMOG>2.0.ZU;2-9
Abstract
Back side Raman measurements were performed on Ge/Pd/n-GaAs ohmic cont acts. The analysis was carried out on as-deposited and annealed Ge/Pd/ 60 nm GaAs structures, and complemented by measurements on isolated 60 nm GaAs slabs. Ohmic behavior is found to coincide with the presence of a confined, highly doped (approximately 1-3 X 10(19)/cm3) region in the GaAs surface layers. This result can be interpreted as giving dir ect experimental evidence for the importance of doping in the ohmic be havior for this contact.