THRESHOLD DOSE FOR ION-INDUCED INTERMIXING IN INGAAS GAAS QUANTUM-WELLS/

Authors
ALLARD LB AERS GC PIVA PG POOLE PJ BUCHANAN M TEMPLETON IM JACKMAN TE CHARBONNEAU S AKANO U MITCHELL IV
Citation
Lb. Allard et al., THRESHOLD DOSE FOR ION-INDUCED INTERMIXING IN INGAAS GAAS QUANTUM-WELLS/, Applied physics letters, 64(18), 1994, pp. 2412-2414
Citations number
16
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
64
Issue
18
Year of publication
1994
Pages
2412 - 2414
Database
ISI
SICI code
0003-6951(1994)64:18<2412:TDFIII>2.0.ZU;2-O
Abstract
We have determined the threshold dose for 8 MeV Bi+ ions to induce int ermixing of GaAs quantum wells in AlGaAs and InGaAs quantum wells in G aAs after rapid thermal annealing at 850-degrees-C. Our measured thres hold for the GaAs/AlGaAs system agrees well with previous work. The th reshold for the InGaAs/GaAs system is much lower and explains, at leas t in part, earlier difficulties in the lateral patterning of nanostruc tures by focused-ion-beam lithography.