Z. Gergintschew et al., THE CAPACITIVELY CONTROLLED FIELD-EFFECT TRANSISTOR (CCFET) AS A NEW LOW-POWER GAS SENSOR, Sensors and actuators. B, Chemical, 36(1-3), 1996, pp. 285-289
The operating principle of a new work function gas sensor, the capacit
ively controlled field effect transistor (CCFET) is presented. It cons
ists of a capacitor with an air gap and a field effect transistor. Thr
ee different CCFET-structures (based on a standard CMOS technology) ar
e realized: discrete, hybrid and integrated. An optimized operating an
d guard circuit for the CCFET is also presented. The sensor properties
are discussed along with their responses to H-2, NH3 and C6H6 at temp
eratures ranging from room temperature to 60 degrees C. Pd and Ga2O3 w
as used for the gas sensitive layer.