THE CAPACITIVELY CONTROLLED FIELD-EFFECT TRANSISTOR (CCFET) AS A NEW LOW-POWER GAS SENSOR

Citation
Z. Gergintschew et al., THE CAPACITIVELY CONTROLLED FIELD-EFFECT TRANSISTOR (CCFET) AS A NEW LOW-POWER GAS SENSOR, Sensors and actuators. B, Chemical, 36(1-3), 1996, pp. 285-289
Citations number
9
Categorie Soggetti
Electrochemistry,"Chemistry Analytical","Instument & Instrumentation
ISSN journal
09254005
Volume
36
Issue
1-3
Year of publication
1996
Pages
285 - 289
Database
ISI
SICI code
0925-4005(1996)36:1-3<285:TCCFT(>2.0.ZU;2-D
Abstract
The operating principle of a new work function gas sensor, the capacit ively controlled field effect transistor (CCFET) is presented. It cons ists of a capacitor with an air gap and a field effect transistor. Thr ee different CCFET-structures (based on a standard CMOS technology) ar e realized: discrete, hybrid and integrated. An optimized operating an d guard circuit for the CCFET is also presented. The sensor properties are discussed along with their responses to H-2, NH3 and C6H6 at temp eratures ranging from room temperature to 60 degrees C. Pd and Ga2O3 w as used for the gas sensitive layer.