HIGH-EFFICIENCY INGAAS GAAS SINGLE-QUANTUM-WELL LASERS USING SINGLE-STEP METALORGANIC CHEMICAL-VAPOR-DEPOSITION/

Low-threshold-current single-quantum-well InGaAs/GaAs lasers are fabri cated by metalorganic chemical vapor deposition on a nonplanar substra te. By taking advantage of the growth rate and doping differences on d ifferent crystal facets during the growth, a buried heterostructure la ser with natural current blocking p-n-p-n junction is formed by a sing le growth step. Threshold currents as low as 1.0 mA under pulsed opera tion and 1.2 mA under continuous-wave operation are obtained for uncoa ted lasers at room-temperature. The lasers showed high external quantu m efficiency (80%) and high T0 (150 K). High reflection coated laser ( 95%/95%) have CW threshold current as low as 0.28 mA.