ELECTROABSORPTION PROPERTIES OF INGAAS INALAS MULTIPLE-QUANTUM-WELL STRUCTURES AT 1.5 MU-M/

The electroabsorption properties of InGaAs/InAlAs MQW structures are c haracterised in terms of DELTAalpha, DELTAalpha/F and DELTAalpha/alpha 0, where DELTAalpha is the electroabsorption, alpha0 is the residual a bsorption coefficient under zero bias, and F is the applied electric f ield. The limitations of these structures for 1.5 mum modulators are p rimarily due to the relatively small DELTAalpha/F values as a result o f the small well width. The results are compared with the literature.