LOW-TEMPERATURE ANNEALING OF ION-IMPLANTED KNBO3 CHANNEL WAVE-GUIDES

Authors
PLISKA T JUNDT DH FLUCK D GUNTER P
Citation
T. Pliska et al., LOW-TEMPERATURE ANNEALING OF ION-IMPLANTED KNBO3 CHANNEL WAVE-GUIDES, Electronics Letters, 30(7), 1994, pp. 562-563
Citations number
11
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
30
Issue
7
Year of publication
1994
Pages
562 - 563
Database
ISI
SICI code
0013-5194(1994)30:7<562:LAOIKC>2.0.ZU;2-T
Abstract
Ion implanted KNbO3 channel waveguides were annealed at 150-degrees-C for several hours. The waveguide losses were considerably reduced at v isible and near-infrared wavelengths showing a minimum loss coefficien t of 1.7dBcm-1 at 633nm. No significant change of the refractive index profile was observed.