1.3-MU-M INGAAS GAAS STRAINED-QUANTUM-WELL LASERS WITH INGAP CLADDINGLAYER

Authors
UCHIDA T KURAKAKE H SODA H YAMAZAKI S
Citation
T. Uchida et al., 1.3-MU-M INGAAS GAAS STRAINED-QUANTUM-WELL LASERS WITH INGAP CLADDINGLAYER, Electronics Letters, 30(7), 1994, pp. 563-565
Citations number
3
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
30
Issue
7
Year of publication
1994
Pages
563 - 565
Database
ISI
SICI code
0013-5194(1994)30:7<563:1IGSLW>2.0.ZU;2-F
Abstract
Using MOVPE, we fabricated strained quantum well 1.3 mum lasers with a n InGaP cladding layer on a GaAs substrate. The lasers had a high gain coefficient of 60cm-1. Lasers with high reflection facets had a low t hreshold current density of 500 A/cm2, and a high characteristic tempe rature of 100 K.