ALTERNATE DOPING OF P-TYPE AND N-TYPE IMPURITIES FOR ALGALNP SELFALIGNED STEPPED SUBSTRATE (S(3)) LASERS

The authors fabricated lateral pn junctions in AlGaInP by alternate do ping on a stepped substrate composed of (100) and (411)A faces with Zn and Se. It was found that the alternately-doped area on the (100) fac c becomes a uniform n-type conduction region; this is attributed to ca rrier depletion in lightly Zn-doped regions. The alternately-doped are a on the (411)A face becomes a uniform p-type conduction region due to strong Zn diffusion over the lightly Se-doped regions. Using alternat e doping, the authors fabricated a selfaligned stepped substrate (S3) laser. The low resistivity and high-power operation (50-degrees-C 35 m W) of this laser are comparable to those of lasers fabricated using si multaneous impurity doping.