LOW-TEMPERATURE SILICON-NITRIDE DEPOSITION BY DIRECT PHOTOLYSIS USINGHIGH-POWER KRYPTON FLASH LAMPS

Authors
DULAC O NISSIM YI
Citation
O. Dulac et Yi. Nissim, LOW-TEMPERATURE SILICON-NITRIDE DEPOSITION BY DIRECT PHOTOLYSIS USINGHIGH-POWER KRYPTON FLASH LAMPS, Electronics Letters, 30(7), 1994, pp. 602-603
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
30
Issue
7
Year of publication
1994
Pages
602 - 603
Database
ISI
SICI code
0013-5194(1994)30:7<602:LSDBDP>2.0.ZU;2-T
Abstract
Silicon nitride films have been deposited on InP using a photochemical process. A high power krypton flash lamp was used to produce the dire ct photolysis of conventional reactive gases with the highest depositi on rates ever reported in UVCVD (93 angstrom/min). Also, the high UV f luence allows a cold process and results in films with excellent struc tural and electrical properties.