MEASUREMENT OF PLASMA ELECTRON-DENSITY GENERATED BY A SEMICONDUCTOR BRIDGE (SCB)

Authors
KIM J SCHAMILOGLU E MARTINEZTOVAR B JUNGLING KC
Citation
J. Kim et al., MEASUREMENT OF PLASMA ELECTRON-DENSITY GENERATED BY A SEMICONDUCTOR BRIDGE (SCB), Electronics Letters, 30(7), 1994, pp. 603-604
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
30
Issue
7
Year of publication
1994
Pages
603 - 604
Database
ISI
SICI code
0013-5194(1994)30:7<603:MOPEGB>2.0.ZU;2-K
Abstract
To gain better understanding of semiconductor bridge (SCB) discharge b ehaviour, we have measured the plasma electron density generated by SC Bs using a microwave resonator probe technique in a vacuum (less-than- or-equal-to 10(-5)torr). This method is superior to Langmuir probes in this application because of sheath effects, small bridge areas, and u nknown fraction of multiple ions.