POTENTIALLY HIGH-PERFORMANCE CARBON-DOPED GALNP GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH DIFFERENT COMPOSITIONAL BASE GRADINGS/

Authors
SONG JI CANEAU C HONG WP CHOUGH KB
Citation
Ji. Song et al., POTENTIALLY HIGH-PERFORMANCE CARBON-DOPED GALNP GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH DIFFERENT COMPOSITIONAL BASE GRADINGS/, Electronics Letters, 30(7), 1994, pp. 605-606
Citations number
12
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
30
Issue
7
Year of publication
1994
Pages
605 - 606
Database
ISI
SICI code
0013-5194(1994)30:7<605:PHCGGH>2.0.ZU;2-P
Abstract
The characteristics of carbon-doped GaInP/GaAs heterojunction bipolar transistors (HBTs) with a compositionally-graded base are reported. Th e characteristics of HBTs with three different linearly-graded AlxGa1- xAs bases (x = 0 --> 0.1, 0 --> 0.2, 0 --> 0.3) are compared with thos e of an HBT without base grading. Nearly ideal transistor characterist ics were observed for x values up to 0.2, indicating possible high-spe ed operation of graded base GaInP/GaAs HBTs.