CONDUCTIVITY AND MOBILITY CONTACTLESS MEASUREMENTS OF SEMICONDUCTING LAYERS BY MICROWAVE-ABSORPTION AT 35-GHZ

A technique of semiconductor characterization by microwave reflectivit y at 35 GHz is described. Measurement of the reflection coefficient, a nd its change as a function of the external static magnetic field, giv e access to the conductivity and the mobility of thin conducting layer s or bulk samples. An analysis tool of experimental data, associating a theoretical model with numerical methods, is proposed for the determ ination of reliable material parameters. The sample fills completely t he waveguide cross section. The measurements are contactless, non dest ructive and fast. Experimental results, demonstrating the validity of this device, are shown and confronted with Van der Pauw and Hall measu rements.