METASTABLE ELECTRICAL-ACTIVITY OF MISFIT-DISLOCATION-ASSOCIATED DEFECTS IN SI SI(GE) HETEROEPITAXIAL STRUCTURES - EBIC DLTS CORRELATION/

Thermally induced metastable electrical activity with buried heteroepi taxial layers in Si/Si(Ge) has been investigated using deep-level tran sient spectroscopy (DLTS) and temperature-dependent electron-beam-indu ced current and preferential chemical etching. Examination of diodes l ocated on regions with different misfit dislocation densities on the s ame wafer indicate that the concentration of the metastable electronic defects decreases with increasing dislocation density. Depth-dependen t DLTS reveals two metastable deep level traps, one of which is associ ated with unrelaxed interfacial strain. A discussion of the possible p hysical sources of these two defect levels is presented.