RECOMBINATION ACTIVITY OF CLEAN AND CONTAMINATED MISFIT DISLOCATIONS IN SI(GE) STRUCTURES

Authors
KITTLER M ULHAQBOUILLET C HIGGS V
Citation
M. Kittler et al., RECOMBINATION ACTIVITY OF CLEAN AND CONTAMINATED MISFIT DISLOCATIONS IN SI(GE) STRUCTURES, Materials science & engineering. B, Solid-state materials for advanced technology, 24(1-3), 1994, pp. 52-55
Citations number
12
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
24
Issue
1-3
Year of publication
1994
Pages
52 - 55
Database
ISI
SICI code
0921-5107(1994)24:1-3<52:RAOCAC>2.0.ZU;2-T
Abstract
The recombination at misfit dislocations in Si(Ge) structures was stud ied by the technique of electron-beam-induced current. The contrast te mperature dependence was interpreted using the Schokley-Read-Hall reco mbination theory. Different situations were observed: either a dominan ce of shallow centres (intrinsic property) or of midgap levels (contam ination), or a combination of both. D-band luminescence studies suppor t the role of contamination. The very small recombination at dislocati ons in as-grown material was interpreted as a passivation of the intri nsic activity.