2 TYPES OF ELECTRON-BEAM-INDUCED CURRENT BEHAVIOR OF MISFIT DISLOCATIONS IN SI(GE) - EXPERIMENTAL-OBSERVATIONS AND MODELING

Authors
KITTLER M SEIFERT W
Citation
M. Kittler et W. Seifert, 2 TYPES OF ELECTRON-BEAM-INDUCED CURRENT BEHAVIOR OF MISFIT DISLOCATIONS IN SI(GE) - EXPERIMENTAL-OBSERVATIONS AND MODELING, Materials science & engineering. B, Solid-state materials for advanced technology, 24(1-3), 1994, pp. 78-81
Citations number
6
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
24
Issue
1-3
Year of publication
1994
Pages
78 - 81
Database
ISI
SICI code
0921-5107(1994)24:1-3<78:2TOECB>2.0.ZU;2-H
Abstract
The paper reports measurements of electron-beam-induced current contra st c vs. temperature T and beam current I(b) for two misfit dislocatio ns in a p-type Si/SiGe sample. It is demonstrated that the different b ehaviour observed can be explained on the basis of the Shockley-Read-H all recombination theory. The activity of the dislocation with dc(T)/d T>0 is controlled by deep centres while that of the other dislocation having dc(T)/dT<0 indicates shallow centres lying about 0.075 eV from the band edge.