ON THE EFFECT OF THE RECOMBINATION WITHIN THE DEPLETION ZONE ON THE EBIC SIGNAL AT SCHOTTKY CONTACT

Authors
BEGGAH Y TABET N TARENTO RJ
Citation
Y. Beggah et al., ON THE EFFECT OF THE RECOMBINATION WITHIN THE DEPLETION ZONE ON THE EBIC SIGNAL AT SCHOTTKY CONTACT, Materials science & engineering. B, Solid-state materials for advanced technology, 24(1-3), 1994, pp. 101-104
Citations number
9
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
24
Issue
1-3
Year of publication
1994
Pages
101 - 104
Database
ISI
SICI code
0921-5107(1994)24:1-3<101:OTEOTR>2.0.ZU;2-B
Abstract
A simple approach is proposed to analyse the effect of the carrier rec ombination within the depletion zone on the collection efficiency of a Schottky contact. A collection velocity is defined at the boarder of the depletion zone. The model allows one to obtain a good fit of the e xperimental dependence of the collection efficiency on the primary ele ctron beam energy observed for Au-Ge and Pt-Ge Schottky contacts. The effect of the temperature is discussed.