CATHODOLUMINESCENCE AND ELECTRON-BEAM-INDUCED CURRENT INVESTIGATIONS OF SINGLE DISLOCATIONS IN GAAS

Authors
WOSINSKI T ZOZIME A RIVIERE A
Citation
T. Wosinski et al., CATHODOLUMINESCENCE AND ELECTRON-BEAM-INDUCED CURRENT INVESTIGATIONS OF SINGLE DISLOCATIONS IN GAAS, Materials science & engineering. B, Solid-state materials for advanced technology, 24(1-3), 1994, pp. 112-114
Citations number
16
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
24
Issue
1-3
Year of publication
1994
Pages
112 - 114
Database
ISI
SICI code
0921-5107(1994)24:1-3<112:CAECIO>2.0.ZU;2-L
Abstract
Recombination activity of alpha and beta dislocations introduced by mi cro-indentation in n-type GaAs has been studied by means of cathodolum inescence (CL) and electron-beam-induced current (EBIC) techniques. Qu antitative measurements of both CL and EBIC contrast profiles across s everal tens of single 60-degrees dislocations revealed a distinct diff erence between the contrast values of the two dislocation types. The r esults are interpreted in terms of recombination activity associated w ith the dislocation-related energy levels.