DETERMINATION OF THE LATERAL DISTRIBUTION OF ELECTRON-HOLE PAIRS GENERATED BY AN ELECTRON-BEAM IN AL0.4GA0.6AS BY CATHODOLUMINESCENCE

Authors
ARAUJO D BONARD JM OELGART G GANIERE JD MORIERGENOUD F REINHART FK
Citation
D. Araujo et al., DETERMINATION OF THE LATERAL DISTRIBUTION OF ELECTRON-HOLE PAIRS GENERATED BY AN ELECTRON-BEAM IN AL0.4GA0.6AS BY CATHODOLUMINESCENCE, Materials science & engineering. B, Solid-state materials for advanced technology, 24(1-3), 1994, pp. 124-129
Citations number
13
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
24
Issue
1-3
Year of publication
1994
Pages
124 - 129
Database
ISI
SICI code
0921-5107(1994)24:1-3<124:DOTLDO>2.0.ZU;2-A
Abstract
The cathodoluminescence mode of the scanning electron microscope is us ed for the first time to investigate the lateral dependence of the ele ctron-hole pair generation by the electron beam of the scanning electr on microscope m semiconducting material. A multiple-quantum-well struc ture acts as a detector to measure the relative number of generated ca rriers by their radiative recombination. The method, which avoids the effect of carrier diffusion, enhances the resolution of the measuremen t to 50 nm and should prove a help for the quantitative interpretation of cathodoluminescence evaluations.