LIGHT-BEAM-INDUCED TRANSIENT SPECTROSCOPY OF OXIDATION-INDUCED STACKING-FAULTS IN SILICON

We have applied the technique of light-beam-induced transient spectros copy, which characterizes minority carrier capture and emission at poi nt and extended defects, to oxidation-induced stacking faults in n-typ e silicon. We have compared the minority carrier trap data with conven tional deep-level transient spectra for majority carrier traps. We fin d that we are able to distinguish between hole capture at randomly dis tributed point defects (e.g. Au), and hole capture at point defects wh ich are associated with the extended-defect strain field.