SPATIALLY-RESOLVED PHOTOLUMINESCENCE AND ELECTRON-BEAM-INDUCED CURRENT STUDIES OF A COINCIDENCE SIGMA=25 SILICON BICRYSTAL

Authors
RIZK R CRUEGE F MADELON R NOUET G
Citation
R. Rizk et al., SPATIALLY-RESOLVED PHOTOLUMINESCENCE AND ELECTRON-BEAM-INDUCED CURRENT STUDIES OF A COINCIDENCE SIGMA=25 SILICON BICRYSTAL, Materials science & engineering. B, Solid-state materials for advanced technology, 24(1-3), 1994, pp. 184-187
Citations number
23
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
24
Issue
1-3
Year of publication
1994
Pages
184 - 187
Database
ISI
SICI code
0921-5107(1994)24:1-3<184:SPAEC>2.0.ZU;2-W
Abstract
Spatially resolved photoluminescence (PL) and electron-beam-induced cu rrent (EBIC) measurements were performed on a heat-treated SIGMA = 25 silicon bicrystal at 4.2 and 300 K. The early stages of both profiles across the grain boundary (GB) obtained for PL and EBIC scans were int erpreted in terms involving the existence of a denuded zone on either side of the GB. Otherwise, a dissociation mechanism, due to GB precipi tates, of the condensed and free excitons is evidenced and has led to the determination of the spatial distribution of these particles.