CHARACTERIZATION OF IMPLANTED SILICON-WAFERS BY THE NONLINEAR PHOTOREFLECTANCE TECHNIQUE

The interpretation of the photoreflectance signal in the case of impla nted silicon wafers relies on calibration procedures as there is no ph ysical model of the effect of implantation on the photothermal signal. We have previously demonstrated that, under specific experimental con ditions, non-linear recombination processes (Auger recombination in pa rticular) not only cannot be neglected but also can become the main so urce of signal. In this paper, we present and discuss some results of photoreflectance experiments made on implanted silicon wafers under co nditions in which non-linear effects prevail. We propose a model for t he dependence of photoreflectance on implantation dose based on non-li near recombination in the implanted layer.