AN ANALYTIC POLYSILICON DEPLETION EFFECT MODEL FOR MOSFETS

A novel polysilicon depletion model for MOSFET devices is presented. I t is shown that only simple modifications to standard analytical MOSFE T models used for circuit simulations are required to account for the polysilicon depletion effect. The accuracy of the model is validated b y comparing results to both simulated and measured device characterist ics. It is also shown that neglecting the polysilicon depletion effect for devices with non-degenerate polysilicon gates may lead to non-phy sical model parameter values and large errors in the calculated intrin sic device capacitances.