RANDOM TELEGRAPH SIGNALS IN ACCUMULATION-MODE SOI NMOSFETS/

Random telegraph signals (RTS's) arising from interfacial defects in s mall accumulation-mode SOI/nMOSFET's have been studied. By analyzing t he average capture time of each RTS as a function of both the front-ga te and back-gate voltages, we are able to distinguish between defects at the front interface from those at the back interface. In contrast t o the RTS's typically observed in enhancement-mode MOSFET's where only those interfacial defects within an energy range close to the Si band edge can be measured, the use of the accumulation-mode SOI/nMOSFET ma kes it possible to probe interface traps near midgap.