COMPUTER-AIDED-DESIGN AND EXPERIMENTAL APPLICATIONS OF TUNNEL-DIODES AS A NARROW-BAND AMPLIFIER SYSTEMS

The purpose of this paper is to shed further light on the operating ch aracteristics and limitations of tunnel diode amplifier circuits, part icularly those with different doping concentrations. This has been ach ieved by a theoretical modeling, economical computer programs and expe rimental measurements. The behaviour of the tunnel diode operating at high frequency circuits, and the effects of material parameters and do ping levels on their performance are presented and discussed. This lea ds to a better understanding of these devices and their limitations. I t is found that the amplifier gain exceeds unity, and it increases wit h frequency reaching a peak at a certain value of the operating freque ncy, then if decreases at higher frequencies, down to a constant plate au. Results of the predicted, measured gain show that it depends on th e device physical parameters and its material, circuit parameters, and operating conditions. The shape of the response curve of the amplifie r circuit is a function of the dynamic negative conductance and also t he resonance nature of the circuit.