2-PHOTON ABSORPTION OF AN INTENSE FEMTOSECOND PULSE IN GLASSES DOPED WITH MICROSCOPIC SEMICONDUCTOR CRYSTALS AT A PHOTON ENERGY GREATER-THAN THE BAND-GAP

Authors
BEZEL IV MATVEETS YA STEPANOV AG CHEKALIN SV YARTSEV AP
Citation
Iv. Bezel et al., 2-PHOTON ABSORPTION OF AN INTENSE FEMTOSECOND PULSE IN GLASSES DOPED WITH MICROSCOPIC SEMICONDUCTOR CRYSTALS AT A PHOTON ENERGY GREATER-THAN THE BAND-GAP, JETP letters, 59(6), 1994, pp. 403-407
Citations number
9
Categorie Soggetti
Physics
Journal title
JETP letters → ACNP
ISSN journal
00213640
Volume
59
Issue
6
Year of publication
1994
Pages
403 - 407
Database
ISI
SICI code
0021-3640(1994)59:6<403:2AOAIF>2.0.ZU;2-K
Abstract
The nonlinear transmission of glasses doped with semiconductor crystal lites has been measured over a broad intensity range (4 X 10(8)-3 X 10 (12) W/cm2) with the help of femtosecond laser pulses. In the interval 10(11)-10(12) W/cm2 the absorption by the samples is due primarily to a two-photon absorption of the semiconductors. The coefficients of th is two-photon absorption, beta, have been found for RG-4 and RG-8 glas ses: (3.8 +/- 1. 9) X 10(-10) and (5.3 +/- 2.7) X 10(-10) cm/W.