EMISSION OF MCS+ SECONDARY IONS FROM SEMICONDUCTORS BY CESIUM BOMBARDMENT

The emission of MCs+ molecular ions sputtered from a variety of elemen tal (Si, Ge, a-C: H) and compound (GaAs, InP, InSb, ZnTe, ZnMnTe, ZnSe , CdS, CdSe, CdTe) semiconductors by Cs+ ion impact was investigated. The energy spectra of MCs+ species were found to be very similar to th at of Cs+ ions but, in most cases, are shifted slightly (approximately 1 eV) to higher energies. The useful yields of MCs+ secondary ions ra nge from 10(-6) (for HCs+) to 10(-4) and, for a given molecular specie s, are largely independent of the specimen. For a series of Ge1-xOx sa mples it was established that the GeCs+ intensity is constant up to an oxygen content of approximately 10 at.% but the emission of GeOCs+ io ns is prominent above this value and constitutes a competing ejection channel.