RIDGE-WAVE-GUIDE DISTRIBUTED-BRAGG-REFLECTOR INGAAS GAAS QUANTUM-WELLLASERS/

Authors
SMITH GM HUGHES JS OSOWSKI ML FORBES DV COLEMAN JJ
Citation
Gm. Smith et al., RIDGE-WAVE-GUIDE DISTRIBUTED-BRAGG-REFLECTOR INGAAS GAAS QUANTUM-WELLLASERS/, Electronics Letters, 30(8), 1994, pp. 651-653
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
30
Issue
8
Year of publication
1994
Pages
651 - 653
Database
ISI
SICI code
0013-5194(1994)30:8<651:RDIGQ>2.0.ZU;2-L
Abstract
A single growth step ridge waveguide InGaAs/GaAs quantum well laser wi th one third-order distributed Bragg reflector (DBR) and one cleaved f acet is described. The DBR is fabricated with direct write electron be am lithography and transferred into the epilayers by reactive ion etch ing. These devices operate on a single longitudinal and fundamental la teral mode, with a threshold current of 23mA and more than 30dB of sid emode suppression.