REALIZATION OF DOPED-CHANNEL MISFETS WITH HIGH BREAKDOWN VOLTAGE IN ALGAAS INGAAS BASED MATERIAL SYSTEM/

Authors
KAVIANI K MADHUKAR A BROWN JJ LARSON LE
Citation
K. Kaviani et al., REALIZATION OF DOPED-CHANNEL MISFETS WITH HIGH BREAKDOWN VOLTAGE IN ALGAAS INGAAS BASED MATERIAL SYSTEM/, Electronics Letters, 30(8), 1994, pp. 669-670
Citations number
4
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
30
Issue
8
Year of publication
1994
Pages
669 - 670
Database
ISI
SICI code
0013-5194(1994)30:8<669:RODMWH>2.0.ZU;2-I
Abstract
The authors report the realisation of a doped-channel MISFET with high drain-source and gate-drain breakdown voltages of 41 and -37V, respec tively, and a record low output conductance of 150 muS/mm. These chara cteristics are achieved through the use of n-type highly doped In0.26G a0.74As as the channel material and a short period (AlAS)3(GaAS)4 supe rlattice as the gate insulator and the lower barrier grown on Ga-As (1 00) substrates.