SERIES RESISTANCE AND EFFECTIVE CHANNEL-LENGTH EXTRACTION OF N-CHANNEL MOSFET AT 77-K

Authors
ORTIZCONDE A LIOU JJ SANCHEZ MG NUNEZ MG ANDERSON RL
Citation
A. Ortizconde et al., SERIES RESISTANCE AND EFFECTIVE CHANNEL-LENGTH EXTRACTION OF N-CHANNEL MOSFET AT 77-K, Electronics Letters, 30(8), 1994, pp. 670-672
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
30
Issue
8
Year of publication
1994
Pages
670 - 672
Database
ISI
SICI code
0013-5194(1994)30:8<670:SRAECE>2.0.ZU;2-X
Abstract
A simple method is presented to extract the effective channel length a nd series resistance of n-channel MOSFETs having 0.6-2.0 mum mask chan nel lengths at room and liquid nitrogen temperatures. Our results show that the effective channel length increases and the series resistance decreases when the temperature is reduced from 300 to 77K.