U-BAND MMIC HBT DRO

Authors
CHEN S TADAYON S HO T PANDE K RICE P ADAIR J GHAHREMANI M
Citation
S. Chen et al., U-BAND MMIC HBT DRO, IEEE microwave and guided wave letters, 4(2), 1994, pp. 50-52
Citations number
NO
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE microwave and guided wave letters → ACNP
ISSN journal
10518207
Volume
4
Issue
2
Year of publication
1994
Pages
50 - 52
Database
ISI
SICI code
1051-8207(1994)4:2<50:UMHD>2.0.ZU;2-7
Abstract
A 46.3 GHz dielectric resonator stabilized oscillator (DRO) using AlGa As/GaAs heterojunction bipolar transistor (HBT) and monolithic microwa ve integrated circuit (MMIC) technology has been designed, fabricated, and characterized. The oscillator exhibits 2.6 dBm output power with 5.8% dc-to-RF efficiency and less than -132 dBC/HZ phase noise at 5 MH z offset from the carrier. To our knowledge, this is the highest frequ ency oscillator ever reported using HBT devices and MMIC technology.