HIGH-EFFICIENCY HBT MMIC LINEAR POWER-AMPLIFIER FOR L-BAND PERSONAL COMMUNICATIONS-SYSTEMS

Authors
YOSHIMASU T TANBA N HARA S
Citation
T. Yoshimasu et al., HIGH-EFFICIENCY HBT MMIC LINEAR POWER-AMPLIFIER FOR L-BAND PERSONAL COMMUNICATIONS-SYSTEMS, IEEE microwave and guided wave letters, 4(3), 1994, pp. 65-67
Citations number
NO
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE microwave and guided wave letters → ACNP
ISSN journal
10518207
Volume
4
Issue
3
Year of publication
1994
Pages
65 - 67
Database
ISI
SICI code
1051-8207(1994)4:3<65:HHMLPF>2.0.ZU;2-#
Abstract
A heterojunction bipolar transistor (HBT) MMIC linear power amplifier is demonstrated for the 1.9 GHz Japanese Personal Handy Phone utilizin g the pi/4 DQPSK modulation technique. At an operating voltage of only 3 V, an output power of 21 dBm and a power added efficiency of 35% ar e obtained along with a modulation vector error of 4.5% and an adjacen t channel interference of -60 dBc in +/-600 kHz offset frequency bands .